Division of Optoelectronics and Magneto-Optics
We focus on research of electrical, optical and detector properties of the wide band-gap semiconductors CdTe, CdZnTe, GaAs, TiBr, SiC, metallorganic (MAPbBr3) and inorganic (CsPbBr3) perovskites (some crystals are also grown in our laboratories) and of development of uncooled spectral sensitive detectors for X-ray and gamma radiation. We also focus on graphene and graphite intercalation compounds. We also study new magnetic nanostructures for applications in photonic chips, 3D imaging or information transfer and storage. We manage experimental equipment for investigation of basic semiconductor properties, experimental setups for Time-of-Flight measurement of charge transport, photoluminescence, optical absorption, photoconductivity and Pockels effect with the utilization of He-Ne or tunable titan-sapphire lasers. We also use unique experimental equipment for optical and magneto-optical characterization of magnetic materials and their nanostructures with high spectral, spatial and temporal resolution in broad temperature range from 2.5 K to 800 K. We employ highly modular ultrahigh vacuum magnetron sputtering system.